rf & microwave transistors avionics applications .400 x .500 2lfl (m112) hermetically sealed . designed for high power pulsed iff . 600 watts (min.) iff 1030 or 1090 mhz . refractory gold metallization . 6.0 db min. gain . low thermal resistance for reliability and ruggedness . 30:1 load vswr capability at specified operating conditions . input matched, common base configuration description the SD1542-42 is a hermetically sealed, gold met- allized, silicon npn power transistor. the sd1542- 42 is designed for applications requiring high peak power and low duty cycles such as iff. the SD1542-42 is packaged in a hermetic metal/ce- ramic package with internal input matching, re- sulting in improved broadband performance and low thermal resistance. pin connection branding SD1542-42 order code SD1542-42 absolute maximum ratings (t case = 25 c) symbol parameter value unit v cc collector-supply voltage* 55 v i c device current* (t c 100 c) 45 a p diss power dissipation* 1670 w t j junction temperature +200 c t stg storage temperature - 65 to +200 c r th(j-c) junction-case thermal resistance* 0.06 c/w * applies only to rated rf operation. SD1542-42 1. collector 3. emitter 2. base 4. base thermal data june 14, 1995 1/4
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 1090 mhz p in = 150 w v cc = 50 v 600 680 w h c f = 1090 mhz p in = 150 w v cc = 50 v 35 40 % g p f = 1090 mhz p in = 150 w v cc = 50 v 6.0 6.6 db note: pulse width = 10 m sec, duty cycle = 1% static symbol test conditions value unit min. typ. max. bv cbo i c = 25 ma i e = 0 ma 65 v bv cer i c = 25 ma r be = 10 w 65 v bv ebo i e = 10 ma i c = 0 ma 3.5 v i ces v ce = 50 v v be = 0 v 60ma h fe v ce = 5 v i c = 2 a 10 250 dynamic typical performance 1030 1050 1070 1090 1110 100 200 300 400 500 600 700 800 frequency ( mhz) power output (w atts) aaaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aa a a a a a a a a a a a a a a a a a a a a a a a a aa p in = 150w v cc = 50v t c = 25c pw = 10sec dc = 1% aaaa a aaa a aaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaa a aaa a aaaa test circuit turned narrowband power output vs frequency 0 60 80 100 120 140 160 180 200 300 400 500 600 700 800 900 power input (w atts) power output (w atts) aaaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa a aaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aa a a a a a a a a a a a a a a a a a a aa vcc = 50v t c = 25c pw = 10sec dc = 1% aaaa a aaa a aaa a aaa a aaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aaaa aa a a a a a a a a aa a - test circuit b - 1030mhz circuit a b power output vs power input SD1542-42 june 14, 1995 2/4
test circuit (1090 mhz) ref.: dwg. no. c125410 1030 mhz typical circuit SD1542-42 june 14, 1995 3/4
package mechanical data ref.: dwg. no.12-0112 rev. g information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectron- ics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replac es all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of sgs-thomson microelectronics. ?1995 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. SD1542-42 june 14, 1995 4/4
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